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Temel Mühendislik Ana Bilim Dalı

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Browsing Temel Mühendislik Ana Bilim Dalı by browse.metadata.publisher "Elsevier"

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    Citation - WoS: 53
    Citation - Scopus: 56
    Optical and Structural Characterization of Silicon Nitride Thin Films Deposited by Pecvd
    (Elsevier, 2019) Guler, I
    Plasma enhanced chemical vapor deposition (PECVD) technique was used to deposit silicon nitride (SiNx) thin films. The silane (SiH4) and ammonia (NH3) were used as reactant gases. Both the flow rates of the NH3 and SiH4 gases were changed but total flow rate kept constant to obtain the different ratio nitrogen (N) in the SiNx films. Fourier transform infrared spectroscopy (FTIR) was used to get information about absorption ratios of the films and the bond types in the films. The refractive index of the films was obtained from ellipsometry measurements. From FTIR measurements and ellipsometry measurements, refractive index for amorphous silicon (Si) and refractive index for stoichiometric SiNx were found as 3.27 and 1.91, respectively. The photoluminescence (PL) measurements were used to see the luminescent of the amorphous Si nanoparticles which were occurred spontaneously during deposition process. High resolution transmission electron microscopy (HRTEM) was used to analyze the Si nanoparticle size.
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    Article
    Citation - WoS: 6
    Citation - Scopus: 6
    A Phenomenological Study on Ferroelectric Pyridinium Tetrafluoroborate (C5nh6) Bf4
    (Elsevier, 2019) Kiraci, A.
    The temperature dependence of the specific heat C-V of (C5NH6)BF4 was analyzed according to a power law formula with a critical exponent alpha deduced from the compressible Ising model in the vicinity of the phase transition temperatures of T-C1 = 238 K and T-C2 = 204 K. The extracted values of the critical exponent alpha within the temperature intervals of vertical bar T - T-C1 vertical bar < 6 K and also T - T-C2 < 6 K were consistent with that predicted from the 3d-Ising model (alpha = 0.10) while obtained values of alpha within the temperature interval of T-C2 - T < 6 K were consistent with that predicted from 2-d potts model (alpha = 0.30). In addition, the thermodynamic quantities: the internal energy (U), the entropy (S) and the Helmholtz free energy (F) of this compound were calculated on the basis of the extracted values of the critical exponent a below and above the phase transition temperatures of T-C1 and T-C2.
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    Article
    Citation - WoS: 8
    Citation - Scopus: 8
    Study of Vibrational Modes in (Ga2s3)x - (ga2se3)1-X Mixed Crystals by Raman and Infrared Reflection Measurements
    (Elsevier, 2019) Guler, I.; Gasanly, N. M.; Isik, M.
    Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)(x) - (Ga2Se3)(1-x) crystals were established. One-mode behavior was displayed from indicated dependencies.