Temel Mühendislik Ana Bilim Dalı

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Citation - WoS: 8
Citation - Scopus: 9
Damping Constant (Linewidth) and the Relaxation Time of the Brillouin La Mode for the Ferroelectric-Paraelectric Transition in Pbzr1-Xtixo3
(Ieee-inst Electrical Electronics Engineers inc, 2016) Kiraci, Ali; Yurtseven, Hamit
The damping constant (linewidth) of the longitudinal acoustic (LA) mode is calculated as a function of temperature using the observed Brillouin frequencies of this mode from the literature for the ferroelectric-paraelectric transition (T-C = 657 K) in PbZr1-xTixO3 (x = 0.45). For this calculation of the damping constant, the pseudospin-phonon coupled model and the energy fluctuation model are used by fitting to the observed data for the Brillouin frequencies of the LA mode in the ferroelectric (T < T-C) and paraelectric (T > T-C) phases of this compound (x = 0.45). Values of the activation energy are deduced for both ferroelectric and paraelectric phases. The relaxation time is also obtained by means of fitting to the observed data from the literature for the inverse relaxation time at various temperatures in the paraelectric phase of PbZr1-xTixO3. The temperature dependences of the damping constant and of the relaxation time with the values of the activation energy that we have calculated indicate that the pseudospin-phonon coupled model and the energy fluctuation model are capable of describing the ferroelectric-paraelectric transition (T-C = 657 K) in PbZr1-xTixO3 (x = 0.45) adequately.
Citation - WoS: 6
Citation - Scopus: 5
Pressure-Dependent Raman Modes Near the Cubic-Tetragonal Transition in Strontium Titanate
(Wiley, 2018) Yurtseven, Hamit; Kiraci, Ali
The pressure dependence of the Raman frequency shifts of various Raman modes is calculated at room temperature using the volume data from the literature for the cubic-tetragonal transition in SrTiO3. The isothermal mode Gruneisen parameters of those Raman modes are obtained, which decrease with increasing pressure for this molecular crystal. Calculated Raman frequencies are then used to predict the damping constant and the inverse relaxation time of those Raman modes as a function of pressure by means of the pseudospin-phonon (PS) coupled model and the energy fluctuation (EF) model to describe the cubic-tetragonal transition in SrTiO3. Also, the values of the activation energy are extracted for the Raman modes studied using both models (PS and EF). Our predicted damping constant and the inverse relaxation time for the Raman modes, can be compared with the experimental measurements close to the cubic-tetragonal transition in SrTiO3.
Citation - WoS: 8
Citation - Scopus: 8
Study of Vibrational Modes in (Ga2s3)x - (ga2se3)1-X Mixed Crystals by Raman and Infrared Reflection Measurements
(Elsevier, 2019) Guler, I.; Gasanly, N. M.; Isik, M.
Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)(x) - (Ga2Se3)(1-x) crystals were established. One-mode behavior was displayed from indicated dependencies.
Citation - WoS: 3
Citation - Scopus: 3
Temperature and Excitation Intensity Tuned Photoluminescence in Ga0.75in0.25se Crystals
(Elsevier Science Bv, 2013) Isik, M.; Guler, I.; Gasanly, N. M.
Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved.

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