Elektrik Elektronik Mühendisliği Bölümü Yayın Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12416/411
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Article Citation - WoS: 7Citation - Scopus: 7Entangled Microwave Photons Generation Using Cryogenic Low Noise Amplifier (Transistor Nonlinearity Effects)(Iop Publishing Ltd, 2022) Salmanogli, AhmadThis article mainly focuses on important quantum phenomenon called entanglement arising the nonlinearity property. This study uses a unique approach in which transistor nonlinearity effect (third-order nonlinearity) entangled microwave photons are created in a cryogenic low-noise amplifier (LNA). For entanglement analysis, the Hamiltonian of the designed cryogenic LNA (containing two coupled oscillators) is derived, and then, using the dynamic equation of motion, the oscillator's number of photons and the phase-sensitive cross-correlation factor are calculated in the Fourier domain to calculate the entanglement metric. The oscillators are coupled to each other through the gate-drain capacitor, and nonlinear transconductance is as an important factor strongly manipulating the entanglement. As a main conclusion, the study shows that the designed circuit using transistor third-order nonlinearity has the ability to generate the entangled microwave photons at very low intrinsic transconductance and more importantly when the noise figure (NF) is strongly minimized. As a complementary task, the printed circuit board of the cryogenic LNA is designed and simulated to verify the ability of the circuit to achieve an ultralow NF, by which the probability of the generation of entangled microwave photons is increased.Article Citation - WoS: 6Citation - Scopus: 8Squeezed State Generation Using Cryogenic Inp Hemt Nonlinearity(Iop Publishing Ltd, 2023) Salmanogli, AhmadThis study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory, and the related Lagrangian is theoretically derived. Subsequently, the total quantum Hamiltonian of the system is derived using Legendre transformation. The Hamiltonian of the system includes linear and nonlinear terms by which the effects on the time evolution of the states are studied. The main result shows that the squeezed state can be generated owing to the transistor's nonlinearity; more importantly, it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian. In fact, the nonlinearity of the transistors induces some effects, such as capacitance, inductance, and second-order transconductance, by which the properties of the external oscillators are changed. These changes may lead to squeezing or manipulating the parameters related to squeezing in the oscillators. In addition, it is theoretically derived that the circuit can generate two-mode squeezing. Finally, second-order correlation (photon counting statistics) is studied, and the results demonstrate that the designed circuit exhibits antibunching, where the quadrature operator shows squeezing behavior.