Temperature and Excitation Intensity Tuned Photoluminescence in Ga0.75in0.25se Crystals
| dc.contributor.author | Isik, M. | |
| dc.contributor.author | Guler, I. | |
| dc.contributor.author | Gasanly, N. M. | |
| dc.contributor.authorID | 101531 | tr_TR |
| dc.date.accessioned | 2020-04-09T12:15:26Z | |
| dc.date.accessioned | 2025-09-18T15:44:25Z | |
| dc.date.available | 2020-04-09T12:15:26Z | |
| dc.date.available | 2025-09-18T15:44:25Z | |
| dc.date.issued | 2013 | |
| dc.description | Isik, Mehmet/0000-0003-2119-8266 | en_US |
| dc.description.abstract | Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved. | en_US |
| dc.description.publishedMonth | 1 | |
| dc.identifier.citation | Isik, M.; Guler, I.; Gasanly, N. M. "Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals", Optical Materials, Vol. 35, No. 3, pp. 414-418, (2013) | en_US |
| dc.identifier.doi | 10.1016/j.optmat.2012.09.019 | |
| dc.identifier.issn | 0925-3467 | |
| dc.identifier.issn | 1873-1252 | |
| dc.identifier.scopus | 2-s2.0-84871720029 | |
| dc.identifier.uri | https://doi.org/10.1016/j.optmat.2012.09.019 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12416/14267 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Science Bv | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Semiconductors | en_US |
| dc.subject | Optical Properties | en_US |
| dc.subject | Photoluminescence | en_US |
| dc.subject | Defect Levels | en_US |
| dc.title | Temperature and Excitation Intensity Tuned Photoluminescence in Ga0.75in0.25se Crystals | en_US |
| dc.title | Temperature and Excitation Intensity Tuned Photoluminescence In Ga0.75In0.25Se Crystals | tr_TR |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.id | Isik, Mehmet/0000-0003-2119-8266 | |
| gdc.author.scopusid | 23766993100 | |
| gdc.author.scopusid | 55445682700 | |
| gdc.author.scopusid | 35580905900 | |
| gdc.author.wosid | Gasanly, Nizami/Hre-1447-2023 | |
| gdc.author.wosid | Isik, Mehmet/Kmy-5305-2024 | |
| gdc.description.department | Çankaya University | en_US |
| gdc.description.departmenttemp | [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Guler, I.] Cankaya Univ, Dept Mat Sci & Engn, TR-06810 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey | en_US |
| gdc.description.endpage | 418 | en_US |
| gdc.description.issue | 3 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.scopusquality | Q2 | |
| gdc.description.startpage | 414 | en_US |
| gdc.description.volume | 35 | en_US |
| gdc.description.woscitationindex | Science Citation Index Expanded | |
| gdc.description.wosquality | Q2 | |
| gdc.identifier.wos | WOS:000314743500015 | |
| gdc.openalex.fwci | 0.412 | |
| gdc.opencitations.count | 2 | |
| gdc.scopus.citedcount | 3 | |
| gdc.wos.citedcount | 3 |