Thermoluminescence in gallium sesquisulfide single crystals: usual and unusual heating rate dependencies

Abstract

Thermoluminescence (TL) experiments were conducted for Ga2S3 crystals to obtain information about trapping parameters. TL measurements were performed from 10 to 300 K with varying heating rates in the range of 0.2–0.8 K/s. Two TL glow peaks centered at 44 K (peak A) and 91 K (peak B) were observed at heating rate of β = 0.5 K/s. For peak A, TL intensity decreased whereas that for peak B increased with elevating the heating rates that means anomalous heating rate occurred for peak B. TL glow curves were analyzed using initial rise method to find activation energies of traps. Distribution of trap centers was investigated using Tmax − Tstop method. Quasi-continuous distributions with increasing activation energies from 40 to 135 meV and 193 to 460 meV were attributed to trap centers A and B, respectively.