Bilgilendirme: Kurulum ve veri kapsamındaki çalışmalar devam etmektedir. Göstereceğiniz anlayış için teşekkür ederiz.
 

Coating of Si3n4 With Hap Via Atomic Layer Deposition

No Thumbnail Available

Date

2023

Journal Title

Journal ISSN

Volume Title

Publisher

Korean Assoc Crystal Growth, inc

Open Access Color

OpenAIRE Downloads

OpenAIRE Views

Research Projects

Journal Issue

Abstract

Silicon nitride (Si3N4) is an attractive implant material, particularly in orthopedic surgery. Although it has only been on the market for spinal fusion surgery requirements so far, it is also a promising candidate for other implant applications where load-bearing is crucial. In this study, we aimed to examine the potential of making the material surface more advantageous for various implant applications by coating it with a very thin hydroxyapatite (HAp) layer using the atomic layer deposition (ALD) method. This was done to improve the material's bioactivity without sacrificing its mechanical properties. Characterization results showed that using a 3:1 CaO:PO4 ALD cycle ratio resulted in the formation of very fine crystalline HAp after heat treatment at 500 degrees C. The bioactivity assessment made by immersing the coated film in SBF revealed HAp formation on the surface, and it was observed that the bioactivity of this surface improved compared to the uncoated one.

Description

Keywords

Silicon Nitride, Atomic Layer Deposition, Hydroxyapatite.

Turkish CoHE Thesis Center URL

Fields of Science

Citation

uşhan Akın, Şeniz Reyhan (2023). "Coating of Si3N4 with HAp via atomic layer deposition", Journal of Ceramic Processing Research, Vol. 24, No. 4, pp. 736-741.

WoS Q

Q3

Scopus Q

Q3
OpenCitations Logo
OpenCitations Citation Count
N/A

Source

Volume

24

Issue

4

Start Page

736

End Page

741
PlumX Metrics
Citations

Scopus : 2

Captures

Mendeley Readers : 6

Google Scholar Logo
Google Scholar™

Sustainable Development Goals