Coating of Si3n4 With Hap Via Atomic Layer Deposition
| dc.contributor.author | Akin, Seniz R. Kushan | |
| dc.date.accessioned | 2024-05-29T13:09:56Z | |
| dc.date.accessioned | 2025-09-18T16:08:22Z | |
| dc.date.available | 2024-05-29T13:09:56Z | |
| dc.date.available | 2025-09-18T16:08:22Z | |
| dc.date.issued | 2023 | |
| dc.description.abstract | Silicon nitride (Si3N4) is an attractive implant material, particularly in orthopedic surgery. Although it has only been on the market for spinal fusion surgery requirements so far, it is also a promising candidate for other implant applications where load-bearing is crucial. In this study, we aimed to examine the potential of making the material surface more advantageous for various implant applications by coating it with a very thin hydroxyapatite (HAp) layer using the atomic layer deposition (ALD) method. This was done to improve the material's bioactivity without sacrificing its mechanical properties. Characterization results showed that using a 3:1 CaO:PO4 ALD cycle ratio resulted in the formation of very fine crystalline HAp after heat treatment at 500 degrees C. The bioactivity assessment made by immersing the coated film in SBF revealed HAp formation on the surface, and it was observed that the bioactivity of this surface improved compared to the uncoated one. | en_US |
| dc.description.sponsorship | Scientific and Technological Research Council of Turkey (TUBITAK) [2219] | en_US |
| dc.description.sponsorship | <BOLD>Author of this study gratefully thanks to Veeco for allowing their atomic layer deposition systems to be used for this study and their guidance. </BOLD> Funding: This work was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) , under grant number 2219 (Fellowship Programme) . | en_US |
| dc.identifier.citation | uşhan Akın, Şeniz Reyhan (2023). "Coating of Si3N4 with HAp via atomic layer deposition", Journal of Ceramic Processing Research, Vol. 24, No. 4, pp. 736-741. | en_US |
| dc.identifier.doi | 10.36410/jcpr.2023.24.4.736 | |
| dc.identifier.issn | 1229-9162 | |
| dc.identifier.scopus | 2-s2.0-85172772311 | |
| dc.identifier.uri | https://doi.org/10.36410/jcpr.2023.24.4.736 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12416/15044 | |
| dc.language.iso | en | en_US |
| dc.publisher | Korean Assoc Crystal Growth, inc | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Silicon Nitride | en_US |
| dc.subject | Atomic Layer Deposition | en_US |
| dc.subject | Hydroxyapatite. | en_US |
| dc.title | Coating of Si3n4 With Hap Via Atomic Layer Deposition | en_US |
| dc.title | Coating of Si3N4 with HAp via atomic layer deposition | tr_TR |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.institutional | Akin, Seniz R. Kushan | |
| gdc.author.scopusid | 57195072406 | |
| gdc.author.yokid | 224219 | |
| gdc.description.department | Çankaya University | en_US |
| gdc.description.departmenttemp | [Akin, Seniz R. Kushan] Cankaya Univ, Dept Mat Sci & Engn, Ankara, Turkiye | en_US |
| gdc.description.endpage | 741 | en_US |
| gdc.description.issue | 4 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.scopusquality | Q3 | |
| gdc.description.startpage | 736 | en_US |
| gdc.description.volume | 24 | en_US |
| gdc.description.woscitationindex | Science Citation Index Expanded | |
| gdc.description.wosquality | Q3 | |
| gdc.identifier.wos | WOS:001085189400019 | |
| gdc.opencitations.count | 0 | |
| gdc.plumx.mendeley | 6 | |
| gdc.plumx.scopuscites | 2 | |
| gdc.publishedmonth | 8 | |
| gdc.scopus.citedcount | 2 | |
| gdc.virtual.author | Akın, Şeniz Reyhan | |
| gdc.wos.citedcount | 2 | |
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