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Coating of Si3n4 With Hap Via Atomic Layer Deposition

dc.contributor.author Akin, Seniz R. Kushan
dc.date.accessioned 2024-05-29T13:09:56Z
dc.date.accessioned 2025-09-18T16:08:22Z
dc.date.available 2024-05-29T13:09:56Z
dc.date.available 2025-09-18T16:08:22Z
dc.date.issued 2023
dc.description.abstract Silicon nitride (Si3N4) is an attractive implant material, particularly in orthopedic surgery. Although it has only been on the market for spinal fusion surgery requirements so far, it is also a promising candidate for other implant applications where load-bearing is crucial. In this study, we aimed to examine the potential of making the material surface more advantageous for various implant applications by coating it with a very thin hydroxyapatite (HAp) layer using the atomic layer deposition (ALD) method. This was done to improve the material's bioactivity without sacrificing its mechanical properties. Characterization results showed that using a 3:1 CaO:PO4 ALD cycle ratio resulted in the formation of very fine crystalline HAp after heat treatment at 500 degrees C. The bioactivity assessment made by immersing the coated film in SBF revealed HAp formation on the surface, and it was observed that the bioactivity of this surface improved compared to the uncoated one. en_US
dc.description.sponsorship Scientific and Technological Research Council of Turkey (TUBITAK) [2219] en_US
dc.description.sponsorship <BOLD>Author of this study gratefully thanks to Veeco for allowing their atomic layer deposition systems to be used for this study and their guidance. </BOLD> Funding: This work was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) , under grant number 2219 (Fellowship Programme) . en_US
dc.identifier.citation uşhan Akın, Şeniz Reyhan (2023). "Coating of Si3N4 with HAp via atomic layer deposition", Journal of Ceramic Processing Research, Vol. 24, No. 4, pp. 736-741. en_US
dc.identifier.doi 10.36410/jcpr.2023.24.4.736
dc.identifier.issn 1229-9162
dc.identifier.scopus 2-s2.0-85172772311
dc.identifier.uri https://doi.org/10.36410/jcpr.2023.24.4.736
dc.identifier.uri https://hdl.handle.net/20.500.12416/15044
dc.language.iso en en_US
dc.publisher Korean Assoc Crystal Growth, inc en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject Silicon Nitride en_US
dc.subject Atomic Layer Deposition en_US
dc.subject Hydroxyapatite. en_US
dc.title Coating of Si3n4 With Hap Via Atomic Layer Deposition en_US
dc.title Coating of Si3N4 with HAp via atomic layer deposition tr_TR
dc.type Article en_US
dspace.entity.type Publication
gdc.author.institutional Akin, Seniz R. Kushan
gdc.author.scopusid 57195072406
gdc.author.yokid 224219
gdc.description.department Çankaya University en_US
gdc.description.departmenttemp [Akin, Seniz R. Kushan] Cankaya Univ, Dept Mat Sci & Engn, Ankara, Turkiye en_US
gdc.description.endpage 741 en_US
gdc.description.issue 4 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q3
gdc.description.startpage 736 en_US
gdc.description.volume 24 en_US
gdc.description.woscitationindex Science Citation Index Expanded
gdc.description.wosquality Q3
gdc.identifier.wos WOS:001085189400019
gdc.opencitations.count 0
gdc.plumx.mendeley 6
gdc.plumx.scopuscites 2
gdc.publishedmonth 8
gdc.scopus.citedcount 2
gdc.virtual.author Akın, Şeniz Reyhan
gdc.wos.citedcount 2
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